simple drive requirement small package outline surface mount device g d s sot? 23 (to?236ab) leshan radio company, ltd. s-lp2305dslt1g 8v p-channel enhancement-mode mosfet v ds = -8v features advanced trench process technology high density cell design for ultra low on-resistance fully characterized avalanche voltage and current improved shoot-through fom 1 3 2 we declare that the material of product compliance with rohs . r ds(on), m vgs@-4.5v, ids@ 3.5a = 6 8 r ds(on), m vgs@-2.5v, ids@ 3a = 8 1 r ds(on), m 2a = 1 1 8 vgs@-1.8v, ids@ maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 8 v gate-source voltage v gs 8 continuous drain current i d -3.5 a pulsed drain current 1) i dm -12 operating junction and storage temperature range t j , t stg -55 to 150 o c note: 1. repetitive rating: pulse width limited by the maximum junction temperature re uirements q device marking shipping 3000/tape&reel 10000/tape&reel lp2305dslt1g p5s lp2305dslt3g p5s total device dissipation fr?5 board a = 25 c p d 1100 mw t ordering information symbol value unit rthj-a thermal resistance junction-ambient 3 110 /w parameter thermal data rev .o 1/5 1 2 3 lp2305dslt1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lp2305dslt1g s-lp2305dslt3g
leshan radio company, ltd. lp2305dslt1g , s-lp2305dslt1g electrical characteristics parameter symbol test condition min typ max unit static 1) drain-source breakdown voltage bv dss v gs = 0v, i d - 8 = -250ua v drain-source on-state resistance r ds(on) v gs d 47.0 = -4.5v, i = -3.5a 68.0 m drain-source on-state resistance r ds(on) v gs d 55.0 = -2.5v, i = -3a 81.0 drain-source on-state resistance r ds(on) v gs d 67.0 = -1.8v, i = -2a 118.0 gate threshold voltage v gs(th) v ds =v gs , i d -0.45 = -250ua -0.8 v zero gate voltage drain current i dss v ds 1 = -6.4v, v gs = 0v ua gate body leakage i gss v gs 100 = 8v, v ds = 0v na forward transconductance g fs v ds = -5v, i d 8.5 = -3.5a s source-drain diode max. diode forward current i s a diode forward voltage v sd i s -1.2 = -1.6a, v gs = 0v v note : 1. static parameters are based on package level with recommended wire-bonding dynamic input capacitance c iss v4vv0f1mh 1245 f output capacitance c oss v ds = 4 v, v gs = 0, f = 1mhz 375 pf reverse transfer capacitance c rss 210 switching turn - on t ime t d(on) v4vr4 13 20 turn - on t ime t r v dd = 4 v, r l = 4 i d 1.0 a, v gen = 4.5 v 25 40 ns turn - of f time t d(off) i d 1 . 0 a , v gen = 4 . 5 v r g = 6 55 80 ns turn - of f t ime t f 19 35 = on - state drain current i d(on) v ds 5 v, v gs = 4.5 v 6 on - state drain current i d(on) v ds 5 v, v gs = 2.5 v 3 a 1.6 2.for design aid only, not subject to production testing. 3.pulse test: pw 300 2%. s duty cycle 2) 3) 3) rev .o 2/5
vgs gate-to-source voltage(v) id drain current(a) vds drain-to-source voltage(v) id drain current(a) id drain current(a) rds(on) on-resistance vgs gate-to-source voltage(v) rds(on) on-resistance leshan radio company, ltd. figure 1. transfer characteristics figure 2. onregion characteristics figure 3. onresistance versus drain current figure 4. on-resistance vs. gate-to-source voltage typical electrical characteristics rev .o 3/5 lp2305dslt1g , s-lp2305dslt1g
leshan radio company, ltd. typical electrical characteristics figure 5. gate charge figure 6. capacitance figure 7. on-resistance vs.junction temperature rev .o 4/5 lp2305dslt1g , s-lp2305dslt1g
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. rev .o 5/5 lp2305dslt1g , s-lp2305dslt1g
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